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TSC80251G1
EPROM Programming
1.1. Internal ROM Features
The internal ROM of the TSC80251G1 derivatives contains five different areas: D D D D D Code Memory Configuration Bytes Lock Bits Encryption Array Signature Bytes
1.1.1. EPROM/OTP Devices
All the Internal ROM but the Signature Bytes of the TSC87251G1 products is made of EPROM cells. The Signature Bytes of the TSC87251G1 products are made of Mask ROM. The TSC87251G1 products are programmed and verified in the same manner as Intel's 87C251Sx, using the same algorithm, which programs at VPP=12.75V using a series of five 100 s pulses per bytes. This results in a programming time of approximately 16 seconds for the 16 Kbyte on-chip code memory. The EPROM of TSC87251G1 products in Window CQPJ is erasable by Ultra-Violet radiation (UV). UV erasure set all the EPROM memory cells to one and allows a reprogramming. The quartz window must be covered with an opaque label when the device is in operation. This is not so much to protect the EPROM array from inadvertent erasure, as to protect the RAM and other on-chip logic. Allowing light to impinge on the silicon die during device operation may cause a logical malfunction. Note:
Erasure of the EPROM begins to occur when the chip is exposed to light wavelength shorter than 4000A. Since sunlight and fluorescent light have wavelength in this range, exposure to these light sources over an extended time (1 week in sunlight or 3 years in room-level fluorescent lighting) could cause inadvertent erasure.
The TSC87251G1 products in plastic packages are One Time Programmable (OTP). Then an EPROM cell cannot be reset by UV once programmed to zero.
1.1.2. Mask ROM Devices
All the Internal ROM of TSC83251G1 products is made of Mask ROM cells. They can be verified using the same algorithm as the EPROM/OTP devices.
1.1.3. ROMless Devices
The TSC80251G1 products include only Configuration Bytes and Signature Bytes made of Mask ROM cells. They can be verified using the same algorithm as the EPROM/OTP devices. These products do not include on-chip Code Memory, Lock Bits or Encryption Array.
MATRA MHS Rev. B - 27 May 1997
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TSC80251G1
1.1.4. Security Features
In some microcontrollers applications, it is desirable that the user program code be secured from unauthorized access. The TSC87251G1 and TSC83251G1 products offer two kinds of protection for program code stored in the on-chip array: D D Program code in the on-chip Code Memory is encrypted when read out for verification if the Encryption Array is Programmed. A three-level lock bit system restricts external access to the on-chip code memory.
1.1.5. Lock Bit System
The TSC87251G1 derivatives implement 3 levels of security for User's program as described in Table 1. The first level locks the programming of the User's internal Code Memory and the Encryption Array. The Configuration Bytes and the Lock Bits are always programmable. The second level locks the verifying of the User's internal Code Memory. It is always possible to verify the Configuration Bytes and the Lock Bits. It is never possible to verify the Encryption Array. The third level locks the external execution. Table 1 Lock bits programming
Level
0 1 2 3 Reserved
Lock bits LB[2:0]
000 001 011 111 Other
Internal Execution
Yes Yes Yes Yes x
External Execution
Yes Yes Yes No x
Verify
Yes* Yes* No No x
Programmable
Yes No No No x
External PROM read (MOVC)
Yes** No No No x
Notes:
* returns encrypted data if Encryption Array is programmed. ** returns non encrypted data.
Level 1 should be set before programming Level 2; Level 2 should be set before programming Level 3. The security level may be verified according to Table 2. Table 2 Lock bits verification
Level
0 1 2 3
Lock bits Data
xxxxx000 xxxxx001 xxxxx01x xxxxx1xx
2 Rev. B
MATRA MHS
- 27 May 1997
TSC80251G1
1.1.6. Encryption Array
The TSC87251G1 and TSC83251G1 controllers include a 128-byte Encryption Array located in nonvolatile memory outside the memory address space. During verification of the on-chip code memory, the seven low-order address bits also address the Encryption Array. As the byte of the code memory is read, it is exclusive-NOR'ed (XNOR) with the key byte from the Encryption Array. If the Encryption Array is not programmed (still all 1s), the user program code is placed on the data bus in its original, unencrypted form. If the Encryption Array is programmed with key bytes, the user program code is encrypted and cannot be used without knowledge of the key byte sequence. To preserve the secrecy of the encryption key byte sequence, the Encryption Array can not be verified. Caution:
When a MOVC instruction is executed the content of the ROM is not encrypted. In order to fully protect the user program code, the lock bit level 1 (see Table 1) must always be set when encryption is used.
Note:
The TSC83251G1 derivatives do not provide lock bit choice. However they always provide the protection of the lock bit level 1 (see Table 1) when the encryption is used.
Caution:
If the encryption feature is implemented, the portion of the on-chip code memory that does not contain program code should be filled with "random" byte values other than FFh to prevent the encryption key sequence from being revealed.
1.2. Signature Bytes
The TSC87251G1, TSC83251G1 and TSC80251G1 contain factory-programmed Signature Bytes. These bytes are located in non-volatile memory outside the memory address space at 30h, 31h, 60h and 61h. To read the Signature Bytes, perform the procedure described in section 1.4., "Verify Algorithm", using the verify signature mode (see Table 5). Signature byte values are listed in Table 3. Table 3 Signature Bytes (Electronic ID)
Signature Address
Vendor Architecture Memory Revision TEMIC C251 16K ROM None (Intel core step A) First (Intel core step D) 30h 31h 60h 61h
Signature Data
58h 40h FBh FFh FEh
1.3. Programming Algorithm
Figure 1 shows the hardware setup needed to program the TSC87251G1 EPROM areas: D D D D D D The chip has to be put under reset and maintained in this state until the completion of the programming sequence. Then PSEN# has to be to forced to a low level for 14 clock cycles before any other operation and it has to be maintained in this state until the completion of the programming sequence. The voltage on the EA# pin must be set to VCC. The programming mode is selected according to the code applied on Port 0. It has to be applied until the completion of this programming operation. The programming address is applied on Ports 1 and 3 which are respectively the Most Significant Byte (MSB) and the Least Significant Byte (LSB) of the address. The programming data are applied on Port 2. 3
MATRA MHS Rev. B - 27 May 1997
TSC80251G1
D D D The EPROM Programming is done by raising the voltage on the EA# pin to VPP, then by generating low level pulses on ALE/PROG# pin (See Table 4). The voltage on the EA# pin must be lowered to VCC before completing the programming operation. It is possible to alternate programming and verification operation (See section 1.4.). Please make sure the voltage on the EA# pin has actually been lowered to VCC before performing the verification operation.
VCC VPP 5 x 100 s EA#/VPP ALE/PROG# RST PSEN# VDD
VCC
Mode
P0[7:0]
TSC87251G1
A[7:0] A[14:8] P3[7:0] XTAL1 P1[7:0] P2[7:0] VSS 4 to 6 MHz
Data
Figure 1 Setup for EPROM Programming
Table 4 EPROM Programming Modes
EPROM Mode
On-chip Code Memory Configuration Bytes Lock Bits
RST
1 1 1
EA#
VPP VPP VPP
PSEN#
0 0 0
ALE/PROG#
5 Pulses 5 Pulses 5 Pulses
P0
68h 69h 6Bh
P2
Data Data X
P1(MSB) P3(LSB)
Address (16K) 0000h-3FFFh CONFIG0: 0080h CONFIG1: 0081h LB0: 0001h LB1: 0002h LB2: 0003h 0000h-007Fh
Notes
1 1 1
Encryption Array
1
VPP
0
5 Pulses
6Ch
Data
1
Notes:
1. The ALE/PROG# pulse waveform is shown in Figure 3.
4 Rev. B
MATRA MHS
- 27 May 1997
TSC80251G1
1.4. Verify Algorithm
Figure 2 shows the hardware setup needed to verify the internal ROM areas of the TSC80251G1 derivatives: D D D D D D D The chip has to be put under reset and maintained in this state until the completion of the verify sequence. Then PSEN# has to be to forced to a low level for 14 clock cycles before any other operation and it has to be maintained in this state until the completion of the programming sequence. The voltage on the EA# pin must be set to VCC and ALE must be set to an high level. The Verify Mode is selected according to the code applied on Port 0. It has to be applied until the completion of this verification. The verification address is applied on Ports 1 and 3 which are respectively the MSB and the LSB of the address. Then device is driving the data on Port 2. It is valid 48 clock periods after the address is stable. It is possible to alternate programming and verification operation (See section 1.3.). Please make sure the voltage on the EA# pin has actually been lowered to VCC before performing the verification operation. Table 5 Verify Modes
Verify EPROM
On-chip code memory Configuration Bytes Lock Bits Signature Bytes
RST
1 1 1 1
EA#
1 1 1 1
PSEN#
0 0 0 0
ALE
1 1 1 1
P0
28h 29h 2Bh 29h
P2
Data Data Data Data
P1(MSB) P3(LSB)
Address (16K) 0000h-3FFFh 0080h-0083h 0000h 30h, 31h, 60h, 61h
VCC EA#/VPP ALE/PROG# RST PSEN# VDD P2[7:0]
VCC
Data
Mode
P0[7:0]
TSC8x251G1
A[7:0] A[14:8] P3[7:0] XTAL1 P1[7:0] VSS 4 to 6 MHz
Figure 2 Setup for Verification
MATRA MHS Rev. B - 27 May 1997
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TSC80251G1
1.5. AC Characteristics
Table 6 EPROM Programming & Verification Characteristics ( TA = 0 to 40C ; VCC = 5V 10%)
Symbol
VPP IPP TOSC TAVGL TGHAX TDVGL TGHDX TEHSH TSHGL TGHSL TGLGH TAVQV TELQV TEHQZ TGHGL
Parameter
Programming Supply Voltage Programming Supply Current Oscillator Frequency Address Setup to PROG# low Address Hold after PROG# low Data Setup to PROG# low Data Hold after PROG# ENABLE High to VPP VPP Setup to PROG# low VPP Hold after PROG# PROG# Width Address to Data Valid ENABLE low to Data Valid Data Float after ENABLE PROG high to PROG# low
Min
12,5
Max
13 75
Units
V mA ns
167 48TOSC 48TOSC 48TOSC 48TOSC 48TOSC 10 10 90
250
ms ms 110 48TOSC 48TOSC ms
0 10
48TOSC ms
P1 = A14:8 P3 = A7:0 TAVGL P2 = D7:0 Data TDVGL VPP EA#/VPP VDD VSS TSHGL ALE/PROG# 1 TEHSH P0 2
Address TGHAX
TGHDX
TGHGL 3 4 5
TGHSL
TGLGH Mode = 68h, 69h, 6Bh or 6Ch
Figure 3 Timings for EPROM Programming 6 Rev. B MATRA MHS
- 27 May 1997
TSC80251G1
P0 Mode = 28h, 29h or 2Bh TELQV P1 = A14:8 P3 = A7:0 Address TEHQZ
P2 = D7:0 TAVQV
Data
Figure 4 Timings for EPROM Verification
MATRA MHS Rev. B - 27 May 1997
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